View MZ0912B100Y_7296851.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

d a t a sh eet product speci?cation supersedes data of june 1992 1997 feb 20 discrete semiconductors mx0912b100y; MZ0912B100Y npn microwave power transistors
1997 feb 20 2 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y features interdigitated structure provides high emitter efficiency diffused emitter ballasting resistors providing excellent current sharing and withstanding a high vswr gold metallization realizes very stable characteristics and excellent lifetime multicell geometry improves power sharing and low thermal resistance input and output matching cell allows an easier design of circuits. applications common base class-c broadband pulse power amplifiers operating at 960 to 1215 mhz for tacan application. description npn silicon planar epitaxial microwave power transistors. the mx0912b100y has a sot439a metal ceramic flange package and improved output prematching cells. it is recommended for new designs. the MZ0912B100Y has a sot443a metal ceramic flange package with the base connected to the flange. it is mounted in common base configuration and specified in class c. pinning pin description 1 collector 2 emitter 3 base connected to ?ange fig.1 simplified outline and symbol (sot439a). o lumns e c b mam045 1 2 top view 3 3 fig.2 simplified outline and symbol (sot443a). handbook, halfpage mam314 1 2 3 top view e c b quick reference data microwave performance at t mb 25 c in a common base class-c broadband ampli?er. mode of operation f (ghz) v cc (v) p l (w) g p (db) h c (%) z i ; z l ( w ) class-c; t p =10 m s; d = 10 % 0.960 to 1.215 50 >100 >7 >42 see figs 8 and 9 warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo slab is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste.
1997 feb 20 3 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 65 v v ces collector-emitter voltage r be =0 w- 60 v v ceo collector-emitter voltage open base - 20 v v ebo emitter-base voltage open collector - 3v i c collector current (dc) t p 10 m s; d 10 % - 6a p tot total power dissipation (peak power) t p 10 m s; d 10 %; t mb =75 c - 290 w t stg storage temperature - 65 +200 c t j operating junction temperature - 200 c t sld soldering temperature up to 0.2 mm from ceramic; t 10 s - 235 c fig.3 maximum power dissipation derating as a function of mounting-base temperature. t p =10 m s; d = 10 %; p tot max = 290 w. handbook, halfpage - 50 200 300 0 100 200 0 p tot (w) 100 t mb ( c) mgl046
1997 feb 20 4 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y thermal characteristics notes 1. see mounting recommendations in the general part of handbook sc19a . 2. equivalent thermal impedance under pulsed microwave operating conditions. characteristics t mb =25 c unless otherwise speci?ed. application information microwave performance up to t mb =25 c measured in the test jig as shown in fig.7 and working in class c broadband in pulse mode; note 1. notes 1. operating conditions and performance for other pulse formats can be made available on request. 2. v cc during pulse. symbol parameter conditions max. unit r th j-mb thermal resistance from junction to mounting-base t j = 125 c 3.2 k/w r th mb-h thermal resistance from mounting-base to heatsink t j = 125 c; note 1 0.2 k/w z th j - h thermal impedance from junction to heatsink t p =10 m s; d =10%; t j = 125 c; notes 1 and 2 0.43 k/w symbol parameter conditions max. unit i cbo collector cut-off current v cb =65v; i e = 0 40 ma v cb =50v; i e =0 4 ma i ces collector cut-off current v cb =60v; r be = 0 40 ma i ebo emitter cut-off current v eb = 1.5 v; i c = 0 400 m a mode of operation f (ghz) v cc (v) (2) p l (w) g p (db) h c (%) z i /z l ( w ) class c; t p =10 m s; d = 10% 0.960 to 1.215 50 3 100 typ. 115 3 7 typ. 7.6 3 42 typ. 44 see figs 8 and 9 t p = 300 m s; d = 10%; see fig.6 1.03 to 1.09 50 typ. 125 typ. 8 typ. 50
1997 feb 20 5 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y fig.4 load power as a function of frequency. (in broadband test circuit as shown in fig.7) v cc = 50 v; t p =10 m s; d = 10%. handbook, halfpage 0.95 1.05 1.15 1.25 f (ghz) p l (w) 130 110 120 mgl047 fig.5 collector efficiency as a function of frequency. (in broadband test circuit as shown in fig.7) v cc = 50 v; t p =10 m s; d = 10%. handbook, halfpage 0.95 1.05 1.15 1.25 f (ghz) h c (%) 50 40 45 mgl048
1997 feb 20 6 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y list of components component description value dimensions catalogue no. l1 0.65 mm diameter copper wire - total length = 12 mm; height of loop = 12 mm - l2 4 turns 0.65 mm diameter copper wire - int. dia. 3 mm; l = 5 mm - c1 capacitor 100 pf - atc, ref. 100a101kp50x c2 tantalum capacitor 10 m f; 50 v -- c3 electrolytic capacitor 470 m f; 63 v -- c4 feedthrough bypass capacitor -- erie, ref. 1250-003 c5, c6 variable gigatrim capacitor 0.6 to 4.5 pf - tekelec, ref. 727.1 fig.6 pulse definition. handbook, full pagewidth mgk066 300 m s 1 m s 1 m s 3 ms
1997 feb 20 7 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y fig.7 broadband test circuit. dimensions in mm. substrate: epsilam 10. thickness: 0.635 mm. permittivity: e r = 10. handbook, full pagewidth mgk067 c3 + v cc l1 l2 c2 c4 c5 c1 30 40 30 40 0.635 0.635 18 23 3 4 10 10 10 3 5 12.5 5 16 7 3 31
1997 feb 20 8 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y fig.8 input impedance as a function of frequency associated with optimum load impedance. v cc = 50 v; z o =10 w ; p l = 100 w. handbook, full pagewidth mgl044 0.2 0.5 1 2 5 0.2 0.5 1 2 10 5 10 0 0.2 0.5 1 2 5 10 + j - j 1.215 ghz 0.960 ghz fig.9 optimum load impedance as a function of frequency associated with input impedance. v cc = 50 v; z o =10 w .; p l = 100 w. handbook, full pagewidth mgl045 0.2 0.5 1 2 5 0.2 0.5 1 2 10 5 10 0 0.2 0.5 1 2 5 10 + j - j 1.215 ghz 0.960 ghz
1997 feb 20 9 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y package outlines fig.10 sot439a. dimensions in mm. torque on nut: max 0.4 nm. recommended screw: m3 recommended pitch for mounting screw: 19 mm. handbook, full pagewidth 0.15 max 3.3 2.9 12.85 max 6 max 1.6 max 23 max 3 seating plane mbc881 2 1 3.7 max 2.7 min 10.3 10.0 9.85 max 2.7 min 8.25 16.5 3.3
1997 feb 20 10 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y fig.11 sot443a. dimensions in mm. torque on nut: max 0.5 nm. recommended screw: m3 handbook, full pagewidth mbc663 10.5 max 10.5 max 23 max 16.5 3.4 3.2 3.1 4 min y x 0.5 x 0.5 x 0.5 y 1 2 3 3.5 2.9 0.1 1.7 max 6.4 max 24 max 0.5 y seating plane
1997 feb 20 11 philips semiconductors product speci?cation npn microwave power transistors mx0912b100y; MZ0912B100Y definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca53 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - sp, brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2870, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 1949 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580/xxx france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, mumbai 400 018, tel. +91 22 4938 541, fax. +91 22 4938 722 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 127147/00/02/pp12 date of release: 1997 feb 20 document order number: 9397 750 01717

▲Up To Search▲

Price & Availability of MZ0912B100Y

	To Download MZ0912B100Y Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .